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& Substrate
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ETCH AND STRIP SYSTEM

Etch and Strip Systems

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UtE Model CESx "Chemical-Etch" Systems

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The ULTRA t Family of Etch & Clean Products are distinctively designed to meet the specific process needs of today's leading-edge applications for Wafers, Photomask and Substrates. The highly efficient CESx124, 126, 128 or 133 are ideal for Etching & Cleaning Wafers, Photomasks and Substrates of various sizes from small diameters to very large diameters.The very reliable and cost effective system utilizes proven assortment of technologies on individual media. The CESx can be configured with several process dispense options from Megasonic Nozzles for DI-H2O or Chemistries; low pressure Nozzles for Chemistry Dispenses; Heaters for Chemistries and DI-H2O; Brush for Surface Agitation to Expedite Reactions, and/or DI-H2O;  and much more. Programmable parabolic arm motion helps to ensure uniform etch.  The Rapid and Effective Drying technique combines Variable Spin Speeds; optional Heated DI-H2O; and Nitrogen Assist. The System is very safe, having "Rinse to pH" to remove any chemistries inside the chamber before access to the substrate.


UtE Model RSSx "Photoresist-strip"Systems

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The ULTRA t Family of Photoresist Strip Products are distinctively designed to meet the specific process needs of leading-edge applications for Wafers, Photomask and Substrates. The highly efficient RSSx 124, 126, 128 or 133 are specifically configured for negative and positive photoresist-based processes for Wafers, Photomask and Substrates. The very reliable and cost effective system utilizes proven assortment of photoresist stripping and cleaning technologies. The RSSx can be configured with several cleaning options from Brush for Sulfuric Peroxide, Surfactant, and/or DI-H2O; Megasonic Nozzle for DI-H2O or Chemistries; low pressure nozzles for chemistry dispenses; heaters for chemistries and DI-H2O;  and much more.  The Rapid and Effective Drying technique combines Variable Spin Speeds; optional Heated DI-H2O; and Nitrogen Assist. The System is very safe, having "Rinse to pH" to remove any chemistries inside the chamber before access to the substrate.


 


  
Arms Available Maximum Substrate Size Max Spindle Speed Recipes Dispenses Brochure
CESx124 4 13" Diameter 2500 Up to 30 12 PDF
CESx128 4 13" Diameter 2500 Up to 30 12 PDF
CESx133 4 21" Diameter 2500 Up to 30 12 PDF
CESx133 AUTOMATION READY 4 21" Diameter 2500 Up to 30 12 PDF
RSSx124 2 13" Diameter 2500 Up to 30 12 PDF
RSSx126 4 13" Diameter 2500 Up to 30 12 PDF
RSSx128 2 13" Diameter 2500 Up to 30 12 PDF
RSSx133 AUTOMATION READY 4 21" Diameter 2500 Up to 30 12 PDF

 

 

 

 


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